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IRLHM620PbF
V DS
V GS max
20
±12
V
V
HEXFET ? Power MOSFET
R DS(on) max
(@V GS = 4.5V)
R DS(on) max
(@V GS = 2.5V)
2.5
3.5
m ?
m ?
D 5
D 6
D 7
D 8
4 G
3 S
2 S
1 S
3.3mm x 3.3mm PQFN
Q g (typical)
I D
(@T c(Bottom) = 25°C)
52
40
nC
A
Applications
? Battery Operated DC Motor Inverter MOSFET
? Secondary Side Synchronous Rectification MOSFET
Features and Benefits
Features
Low R DSon (<2.5m ? )
Low Thermal Resistance to PCB (<3.4°C/W)
Low Profile (<1.0mm)
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
?
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRLHM620TRPBF
PQFN 3.3mm x 3.3mm
Tape and Reel 4000
IRLHM620TR2PBF
PQFN 3.3mm x 3.3mm
Tape and Reel
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C(Bottom) = 25°C
I D @ T C(Bottom) = 100°C
I DM
P D @T A = 25°C
P D @T C(Bottom) = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
20
±12
26
21
40
40
160
2.7
37
0.022
-55 to + 150
V
A
W
W/°C
°C
Notes ? through ? are on page 9
1
www.irf.com ? 2014 International Rectifier
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January 14, 2014
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